ALD210814PCL
Advanced Linear Devices Inc.
Deutsch
Artikelnummer: | ALD210814PCL |
---|---|
Hersteller / Marke: | Advanced Linear Devices, Inc. |
Teil der Beschreibung.: | MOSFET 4N-CH 10.6V 0.08A 16DIP |
Datenblätte: | None |
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
50+ | $6.3498 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 20mV @ 10µA |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | 16-PDIP |
Serie | EPAD®, Zero Threshold™ |
Rds On (Max) @ Id, Vgs | - |
Leistung - max | - |
Verpackung / Gehäuse | 16-DIP (0.300", 7.62mm) |
Paket | Tube |
Betriebstemperatur | - |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | - |
Gate Charge (Qg) (Max) @ Vgs | - |
FET-Merkmal | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 10.6V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 80mA |
Konfiguration | 4 N-Channel, Matched Pair |
Grundproduktnummer | ALD210814 |
ALD210814PCL Einzelheiten PDF [English] | ALD210814PCL PDF - EN.pdf |
MOSFET 4N-CH 10.6V 0.08A 16SOIC
MOSFET 4N-CH 10.6V 0.08A 16DIP
30MM PB IL MOM 12V 2NC WHT
MOSFET 4N-CH 10.6V 0.08A 16DIP
MOSFET 4N-CH 10.6V 0.08A 16SOIC
30MM PB IL MOM 12V 1NO1NC GRN
30MM PB IL MOM 12V 2NC AMB
30MM PB IL MOM 12V 1NO1NC AMB
30MM PB IL MOM 12V 1NO1NC RED
MOSFET 4N-CH 10.6V 0.08A 16DIP
MOSFET 4N-CH 10.6V 0.08A 16DIP
30MM PB IL MOM 12V 2NC YEL
MOSFET 4N-CH 10.6V 0.08A 16SOIC
30MM PB IL MOM 12V 2NC GRN
MOSFET 4N-CH 10.6V 0.08A 16SOIC
MOSFET 4N-CH 10.6V 0.08A 16SOIC
MOSFET 4N-CH 10.6V 0.08A 16DIP
30MM PB IL MOM 12V 2NC BLU
MOSFET 4N-CH 10.6V 0.08A 16SOIC
30MM PB IL MOM 12V 2NC RED
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() ALD210814PCLAdvanced Linear Devices Inc. |
Anzahl*
|
Zielpreis (USD)
|